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Freescale Semiconductor Technical Data
Document Number: MW6IC1940N--1 Rev. 3.1, 12/2009
RF LDMOS Wideband Integrated Power Amplifier
The MW6IC1940GNB wideband integrated circuit is designed with on--chip matching that makes it usable from 1920 to 2000 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
MW6IC1940GNBR1
ARCHIVE INFORMATION
VDS1 RFin RFout/VDS2
GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout / VDS2
VGS1 VGS2 VDS1
Quiescent Current Temperature Compensation (1)
13 12
NC GND
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2006--2009. All rights reserved.
MW6IC1940GNBR1 1
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Final Application 1920-2000 MHz, 40 W, 28 V 2 x W-CDMA * Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth = RF LDMOS WIDEBAND 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. INTEGRATED POWER AMPLIFIER Power Gain -- 28.5 dB Power Added Efficiency -- 13.5% IM3 @ 10 MHz Offset -- --43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- -46 dBc in 3.84 MHz Bandwidth Driver Applications * Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 350 mA, Pout = 26 dBm, Full Frequency Band (1920--2000 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 27 dB IM3 @ 10 MHz Offset -- --59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- -62 dBc in 3.84 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW Output Power CASE 1329A-04 TO-272 WB-16 GULL * Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 20 W CW Pout. PLASTIC Features * Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters * On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power
(1,2)
Symbol VDSS VGS Tstg TC TJ Pin
Value --0.5, +68 --0.5, +6 --65 to +150 150 225 20
Unit Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case W--CDMA Application (Pout = 4.5 W Avg.) Stage 1, 28 Vdc, IDQ1 = 200 mA Stage 2, 28 Vdc, IDQ2 = 440 mA Symbol RJC Value (2,3) 2.1 1.2 Unit C/W
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Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 1920--2000 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 W Avg., f1 = 1922.5 MHz, f2 = 1932.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Power Added Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps PAE IM3 ACPR IRL 26 12.5 -- -- -- 28.5 13.5 --43 --46 --15 31.5 -- --40 --43 --10 dB % dBc dBc dB
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(continued)
MW6IC1940GNBR1 2 RF Device Data Freescale Semiconductor
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Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 40 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands) Quiescent Current Accuracy over Temperature with 18 k Gate Feed Resistors (--10 to 85C) (1) Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW Average Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 1 W CW Average Group Delay @ Pout = 1 W CW Including Output Matching Part--to--Part Insertion Phase Variation @ Pout = 1 W CW, Six Sigma Window Symbol VBW -- IQT GF Delay -- -- -- -- -- 30 5 0.75 1 2.5 10 -- -- -- -- -- -- % dB ns Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 1920--2000 MHz
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Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 240 mA, IDQ2 = 440 mA, 1920--2000 MHz Saturated Pulsed Output Power (12 sec(on), 1% Duty Cycle) Psat -- 60 -- W
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
MW6IC1940GNBR1 RF Device Data Freescale Semiconductor 3
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VD2 VD1 C1 RF INPUT Z1 VG1 VG2 R1 R2 Z2 1 2 3 NC 4 NC 5 NC 6 7 NC 8 9 10 11 Quiescent Current Temperature Compensation DUT 16 NC 15 Z9 14 Z3 Z4 C4 C5 Z10 NC 13 12 C11 C3 Z5 C6 Z6 C7 C8 Z7 Z8 C9 C10 C2
RF OUTPUT
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Z1 Z2 Z3 Z4* Z5* Z6*
2.20 x 0.09 Microstrip 0.13 x 0.04 Microstrip 0.17 x 0.41 Microstrip 0.20 x 0.41 Microstrip 0.11 x 0.41 Microstrip 0.06 x 0.41 Microstrip
Z7* Z8* Z9, Z10 PCB
0.98 x 0.082 Microstrip 0.76 x 0.082 Microstrip 0.08 x 0.079 Microstrip Taconic TLX8--0300, 0.030, r = 2.55
* Variable for tuning
Figure 3. MW6IC1940GNBR1 Test Circuit Schematic
Table 6. MW6IC1940GNBR1 Test Circuit Component Designations and Values
Part C1, C2, C3 C4, C5, C6, C7 C8 C9 C10, C11 R1 R2 Description 2.2 F Chip Capacitors 0.5 pF Chip Capacitors 1.5 pF Chip Capacitor 0.2 pF Chip Capacitor 10 pF Chip Capacitors 4.7 k, 1/4 W Chip Resistor 3.3 k, 1/4 W Chip Resistor Part Number C3225X5R1H225MT ATC100B0R5BT500XT ATC100B1R5BT500XT ATC100B0R2BT500XT ATC100B100JT500XT CRCW12064701FKEA CRCW12063301FKEA Manufacturer TDK ATC ATC ATC ATC Vishay Vishay
MW6IC1940GNBR1 4 RF Device Data Freescale Semiconductor
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VD1 C10 MW6IC1940NB Rev. 0
C2
VD2
CUT OUT AREA
C1
C4 C6
C8 C9
C5
C7
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VG1
R1 R2 VG2 C11 C3
Figure 4. MW6IC1940GNBR1 Test Circuit Component Layout
MW6IC1940GNBR1 RF Device Data Freescale Semiconductor 5
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TYPICAL CHARACTERISTICS
PAE Gps VDD = 28 Vdc, Pout = 4.5 W (Avg.) IDQ1 = 200 mA, IDQ2 = 440 mA, 2--Carrier W--CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) PAE, POWER ADDED EFFICIENCY (%) IM3 (dBc), ACPR (dBc) --14 --16 --18 --20 --22 30 29 28 Gps, POWER GAIN (dB) 27 26 25 24 23 IM3 ACPR 1940 1960 f, FREQUENCY (MHz) 1980 IRL 14 13 12 11 10 --45 --47 --49 --51 2000
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Figure 5. 2-Carrier W-CDMA Wideband Performance @ Pout = 4.5 Watts Avg.
PAE, POWER ADDED EFFICIENCY (%) 31 30 Gps, POWER GAIN (dB) 29 28 27 26 ACPR IRL PAE VDD = 28 Vdc, Pout = 26 dBm (Avg.) IDQ1 = 200 mA, IDQ2 = 350 mA, 2--Carrier W--CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 3 2 1 --55 ACPR (dBc), IM3 (dBc) --60 --65 --12 --14 --16 --18 --20
IM3 --70 25 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz)
Figure 6. 2-Carrier W-CDMA Wideband Performance @ Pout = 26 dBm Avg.
30 29 Gps, POWER GAIN (dB) 28 27 26 25 24 23 22 1 VDD = 28 Vdc, IDQ1 = 200 mA f1 = 1955 MHz, f2 = 1965 MHz Two--Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 IDQ2 = 660 mA 440 mA 330 mA 220 mA 550 mA Gps, POWER GAIN (dB) 30 29 28 27 26 25 24 23 22 1 IDQ1 = 300 mA 200 mA 150 mA 100 mA 250 mA
VDD = 28 Vdc, IDQ2 = 440 mA f1 = 1955 MHz, f2 = 1965 MHz Two--Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 200
Figure 7. Two-Tone Power Gain versus Output Power @ IDQ1 = 200 mA
Figure 8. Two-Tone Power Gain versus Output Power @ IDQ2 = 440 mA
MW6IC1940GNBR1 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
Gps
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22 1920
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
--20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) --25 --30 --35 --40 --45 --50 --55 --60 1 330 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ2 = 200 mA 655 mA 550 mA 440 mA --20 --25 --30 --35 --40 --45 --50 --55 --60 1 300 mA 200 mA 250 mA VDD = 28 Vdc, IDQ2 = 440 mA f1 = 1955 MHz, f2 = 1965 MHz Two--Tone Measurements, 10 MHz Tone Spacing 150 mA IDQ1 = 100 mA
VDD = 28 Vdc, IDQ1 = 200 mA f1 = 1955 MHz, f2 = 1965 MHz Two--Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100
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Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Third Order Intermodulation Distortion versus Output Power @ IDQ1 = 200 mA
--10 --20
Figure 10. Third Order Intermodulation Distortion versus Output Power @ IDQ2 = 440 mA
--15 IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA f1 = 1955 MHz, f2 = 1965 MHz Two--Tone Measurements, 10 MHz Tone Spacing
--18 --21 --24 --27 --30 --33 --36 1
VDD = 28 Vdc, Pout = 40 W (PEP), IDQ1 = 200 mA, IDQ2 = 440 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
--30 3rd Order --40 5th Order --50 7th Order --60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
IM3--U
IM3--L
10 TWO--TONE SPACING (MHz)
100
Figure 11. Intermodulation Distortion Products versus Output Power
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 54 53 Pout, OUTPUT POWER (dBm) 52 51 50 49 48 47 46 45 44 18 19 20 21 22 Actual VDD = 28 Vdc IDQ1 = 200 mA, IDQ2 = 440 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 1965 MHz 23 24 25 26 27 28 29 Pin, INPUT POWER (dBm) P1dB = 46.9 dBm (49 W) P3dB = 47.4 dBm (55 W) P6dB = 47.7 dBm (59 W) 45 40 35 30 25 20 15 10 5 0 0.5
Figure 12. Intermodulation Distortion Products versus Tone Spacing
--15 IM3 --20 ACPR --25 --30 Gps --35 --40 --45 --50 --55 1 10 Pout, OUTPUT POWER (WATTS) AVG. 60 --60
Ideal
Figure 13. Pulsed CW Output Power versus Input Power
Figure 14. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
MW6IC1940GNBR1 RF Device Data Freescale Semiconductor 7
IM3 (dBc), ACPR (dBc)
VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA f1 = 1955 MHz, f2 = 1965 MHz, 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
PAE
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10
100
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
32 TC = --30_C 30 Gps, POWER GAIN (dB) 28 26 24 22 20 PAE VDD = 28 Vdc IDQ1 = 200 mA, IDQ2 = 440 mA f = 1960 MHz 10 Pout, OUTPUT POWER (WATTS) CW Gps 25_C --30_C 25_C 50 85_C 40 30 20 10 0 100 60 PAE, POWER ADDED EFFICIENCY (%) 30 28 Gps, POWER GAIN (dB) 26 24 22 VDD = 24 V 20 0 10 20 30 40 50 60 70 80 28 V 32 V IDQ1 = 200 mA IDQ2 = 440 mA f = 1960 MHz
85_C
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Pout, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain and Power Added Efficiency versus Output Power
30 20 10 S21 (dB) 0 --10 S11 --20 --30 1000 S21 10 5 Gps, POWER GAIN (dB) 0 --5 --10 --15 --20 3000 S11 (dB) 34 32 30
Figure 16. Power Gain versus Output Power
TC = --30_C
25_C 28 26 24
VDD = 28 Vdc Pout = 23 dBm CW IDQ1 = 200 mA IDQ2 = 440 mA 2000 2500
85_C VDD = 28 Vdc, Pout = 4.5 W Avg. IDQ1 = 200 mA, IDQ2 = 440 mA Two--Tone Measurements 1840 1880 1920 1960 2000
1500
22 1800
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response
1010
Figure 18. Power Gain versus Frequency
109 MTTF (HOURS) 1st Stage 108 2nd Stage 107
106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4.5 W Avg., and PAE = 13.5%. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.
Figure 19. MTTF versus Junction Temperature MW6IC1940GNBR1 8 RF Device Data Freescale Semiconductor
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1
f = 1880 MHz Zo = 50
f = 1880 MHz Zload f = 2040 MHz
Zsource
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f = 2040 MHz
VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource 69.33 + j26.65 65.20 + j19.39 61.07 + j12.13 56.93 + j4.87 52.80 -- j2.39 48.67 -- j9.65 44.53 -- j16.91 40.40 -- j24.17 36.27 -- j31.43 Zload 3.65 -- j5.717 3.55 -- j5.95 3.45 -- j6.18 3.35 -- j6.42 3.25 -- j6.65 3.15 -- j6.88 3.05 -- j7.12 2.95 -- j7.35 2.85 -- j7.583
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 20. Series Equivalent Source and Load Impedance MW6IC1940GNBR1 RF Device Data Freescale Semiconductor 9
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Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 440 mA, TC = 25C, 50 ohm system)
f MHz 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 S11 |S11| 0.196 0.331 0.419 0.461 0.474 0.467 0.446 0.411 0.365 0.312 0.255 0.205 0.173 0.172 0.191 0.217 0.236 0.154 0.090 0.081 0.026 0.049 0.119 0.198 0.270 0.334 0.391 0.441 0.485 0.523 0.557 0.587 0.617 0.643 0.665 0.687 0.706 0.723 0.737 0.751 --167 --176 170 157 145 134 122 109 94 78 56 29 --6 --45 --80 --110 --144 136 --117 --143 --151 --31 --31 --42 --52 --61 --70 --78 --85 --92 --97 --103 --109 --114 --119 --124 --129 --134 --139 --143 |S21| 0.014 0.026 0.041 0.057 0.068 0.084 0.116 0.171 0.256 0.384 0.580 0.879 1.345 2.121 3.478 6.197 13.515 39.126 20.507 12.215 9.054 7.340 6.199 5.298 4.537 3.875 3.282 2.771 2.330 1.965 1.661 1.413 1.213 1.044 0.905 0.789 0.693 0.610 0.538 0.475 S21 --146 --164 178 160 147 144 143 138 131 122 111 98 85 70 53 33 5 --69 --160 170 147 126 105 85 66 47 29 13 --3 --17 --31 --43 --55 --66 --77 --88 --99 --109 --120 --130 |S12| 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.003 0.009 0.006 0.005 0.003 0.003 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.003 0.002 0.003 0.003 0.003 0.003 0.003 0.003 S12 67 79 67 66 55 56 56 59 39 45 78 116 101 130 125 141 157 129 66 54 47 48 41 57 60 66 68 75 74 73 67 73 76 76 78 75 74 74 78 79 |S22| 0.994 0.991 0.990 0.990 0.990 0.989 0.987 0.987 0.986 0.984 0.982 0.980 0.977 0.973 0.968 0.958 0.920 0.453 0.816 0.881 0.892 0.894 0.895 0.895 0.896 0.899 0.905 0.913 0.921 0.930 0.937 0.944 0.950 0.955 0.959 0.961 0.963 0.966 0.967 0.969 S22 172 172 171 170 169 168 167 166 165
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1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95
163 161 159 157 153 147 130 23 --159 --178 175 172 170 169 168 167 167 166 166 165 165 164 163 162 162 161 160 160 159 158
(continued)
MW6IC1940GNBR1 10 RF Device Data Freescale Semiconductor
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1.45
164
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 440 mA, TC = 25C, 50 ohm system) (continued)
f MHz 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 S11 |S11| 0.763 0.774 0.785 0.796 0.806 0.815 0.825 0.833 0.841 0.849 0.856 0.864 0.872 0.877 0.885 0.891 0.898 0.902 0.911 0.915 0.921 --147 --152 --156 --159 --163 --166 --170 --173 --176 --178 179 177 174 172 170 169 167 166 164 163 162 |S21| 0.418 0.367 0.319 0.278 0.239 0.206 0.176 0.151 0.128 0.110 0.095 0.081 0.070 0.061 0.053 0.047 0.041 0.037 0.033 0.030 0.028 S21 --141 --152 --162 --173 177 167 157 148 140 132 125 117 111 104 99 93 89 84 80 76 72 |S12| 0.003 0.004 0.004 0.004 0.004 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006 0.006 0.006 0.006 0.006 0.007 0.007 S12 80 75 80 75 77 75 73 74 71 71 65 63 66 60 61 57 57 52 55 54 55 |S22| 0.968 0.969 0.966 0.967 0.965 0.964 0.964 0.962 0.961 0.958 0.957 0.955 0.952 0.950 0.946 0.943 0.941 0.938 0.934 0.932 0.928 S22 158 157 157 156 156 155 155 154 154
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3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00
153 152 152 151 151 150 150 149 149 148 148
MW6IC1940GNBR1 RF Device Data Freescale Semiconductor 11
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3.45
153
PACKAGE DIMENSIONS
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MW6IC1940GNBR1 12 RF Device Data Freescale Semiconductor
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MW6IC1940GNBR1 RF Device Data Freescale Semiconductor 13
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MW6IC1940GNBR1 14 RF Device Data Freescale Semiconductor
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
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Revision 0 1
Date Nov. 2006 Jan. 2007 * Initial Release of Data Sheet
Description
* Updated verbiage on Typical Performances table, p. 2 * Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Added new Figure 13, Pulsed CW Output Power versus Input Power, p. 6 * Added new Figure 18, Power Gain versus Frequency, p. 7 * Replaced Figure 19, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Updated Product Documentation adding AN1907 and AN3263, p. 17
2
Dec. 2008
* Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 * Changed 220C to 225C in Capable Plastic Package bullet, p. 1 * Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1, Functional Block Diagram, p. 1 * Changed Storage Temperature Range in Max Ratings table from --65 to +200 to --65 to +150 for standardization across products, p. 2 * Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 2 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 2 * Updated verbiage on Typical Performances table, p. 3 * Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 * Adjusted scale for Fig. 11, Intermodulation Distortion Products versus Output Power, to show wider dynamic range, p. 7 * Added new Figure 13, Pulsed CW Output Power versus Input Power, p. 7 * Added new Figure 18, Power Gain versus Frequency, p. 8 * Replaced Figure 19, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 * Replaced Case Outline 1329--09, Issue L, with 1329--09, Issue M, p. 12--14. Added pin numbers 1 through 17. * Replaced Case Outline 1329A--03 with 1329A--04, Issue F, p. 1, 15--17. Added pin numbers 1 through 17. Corrected mm dimension L for gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Corrected L1 mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number. * Data sheet archived. Part no longer manufactured. * Updated Product Documentation adding AN1907 and AN3263, p. 18
(continued)
MW6IC1940GNBR1 RF Device Data Freescale Semiconductor 15
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REVISION HISTORY (continued)
Revision 3 3.1 Date Mar. 2009 Dec. 2009 Description * Data sheet revised to reflect part status change, p. 1, 4--5, including use of applicable overlay. * Updated Product Documentation removing AN1907 and AN3263, p. 15 * Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change Notification number, PCN13232, p. 1, 2 * Rev. 3.1 (MW6IC1940GNBR1) data sheet archived. Part no longer manufactured. See Rev. 4.1 for MW6IC1940NBR1.
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MW6IC1940GNBR1 16 RF Device Data Freescale Semiconductor
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How to Reach Us:
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MW6IC1940GNBR1
Document Number: RF Device Data MW6IC1940N--1 Rev. 3.1, 12/2009 Freescale Semiconductor
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